Search for: All records

Abstract The field of organic electronics thrives on the hope of enabling low‐cost, solution‐processed electronic devices with mechanical, optoelectronic, and chemical properties not available from inorganic semiconductors. A key to the success of these aspirations is the ability to controllably dope organic semiconductors with high spatial resolution. Here, recent progress in molecular doping of organic semiconductors is summarized, with an emphasis on solution‐processed p‐type doped polymeric semiconductors. Highlighted topics include how solution‐processing techniques can control the distribution, diffusion, and density of dopants within the organic semiconductor, and, in turn, affect the electronic properties of the material. Research in these areas has recently intensified, thanks to advances in chemical synthesis, improved understanding of charged states in organic materials, and a focus on relating fabrication techniques to morphology. Significant disorder in these systems, along with complex interactions between doping and film morphology, is often responsible for charge trapping and low doping efficiency. However, the strong coupling between doping, solubility, and morphology can be harnessed to control crystallinity, create doping gradients, and pattern polymers. These breakthroughs suggest a role for molecular doping not only in device function but also in fabrication—applications beyond those directly analogous to inorganic doping. 

Abstract Patterned semiconductors are essential for the fabrication of nearly all electronic devices. Over the last two decades, semiconducting polymers (SPs) have received enormous attention due to their potential for creating low‐cost flexible electronic devices, while development of scalable patterning methods capable of producing sub‐μm feature sizes has lagged. A novel method for patterning SPs termed Projection Photothermal Lithography (PPL) is presented. A lab scale PPL microscope is built and it is demonstrated that rapid (≈4 cm²h⁻¹) and large single exposure area (≈0.69 mm²) sub‐μm patterns can be obtained optically. Polymer domains are selectively removed via a photo‐induced temperature gradient that enables dissolution. It is hypothesized that commercial‐scale patterning with a throughput of≈5 m²h⁻¹and resolution of<1μm could be realized through optimization of optical components. 

Abstract Molecular doping of conjugated polymers causes bleaching of the neutral absorbance and results in new polaron absorbance transitions in the mid and near infrared. Here, the concentration dependent changes in the spectra for a series of molecularly doped diketopyrrolopyrrole (DPP) co‐polymers with a series of ultra‐high electron affinity cyanotrimethylenecyclopropane‐based dopants is analyzed. With these strong dopants the polaron mole fraction (Θ) reaches saturation. Analysis of the full spectrum enables separation of neutral and polaron signals and quantification of the polaron mole fraction using a simple noninteracting site model. The peak ratios for both neutral and polaron peaks change systematically with increasing polaron mole fraction for all measured polymers. Analysis of the spectral changes indicates that the polaron mole fraction can be quantified to within 5%. While the total change in the absorbance spectrum with increasing polaron mole fraction is linear, the lowest energy polaron peak (P1) grows nonlinearly, which indicates increased polarization/delocalization. Molecular doping of polymers that form either H‐ or J‐aggregates shows systematically different spectral changes in the vibronic peak ratios of the neutral spectra and provides insights into the polymer configuration at undoped sites in the film. 

Abstract Recent development of dopant induced solubility control (DISC) patterning of polymer semiconductors has enabled direct‐write optical patterning of poly‐3‐hexylthiophene (P3HT) with diffraction limited resolution. Here, the optical DISC patterning technique to the most simple circuit element, a wire, is applied. Optical patterning of P3HT and P3HT doped with the molecular dopant 2,3,5,6‐tetrafluoro‐7,7,8,8‐tetracyanoquinodimethane (F4TCNQ) wires with dimensions of 20–70 nm thickness, 200–900 nm width, and 40 μm length is demonstrated. In addition, optical patterning of wire patterns like “L” bends and “T” junctions without changing the diameter or thickness of the wires at the junctions is demonstrated. The wires themselves show up to 0.034 S cm^‐1conductance when sequentially doped. It is also demonstrated that a P3HT nanowire can be doped, de‐doped, and re‐doped from solution without changing the dimension of the wire. The combined abilities to optically pattern and reversibly dope a polymer semiconductor represents a full suite of patterning steps equivalent to photolithography for inorganic semiconductors. 

Abstract The ever increasing library of materials systems developed for organic solar‐cells, including highly promising non‐fullerene acceptors and new, high‐efficiency donor polymers, demands the development of methodologies that i) allow fast screening of a large number of donor:acceptor combinations prior to device fabrication and ii) permit rapid elucidation of how processing affects the final morphology/microstructure of the device active layers. Efficient, fast screening will ensure that important materials combinations are not missed; it will accelerate the technological development of this alternative solar‐cell platform toward larger‐area production; and it will permit understanding of the structural changes that may occur in the active layer over time. Using the relatively high‐efficiency poly[(5,6‐difluoro‐2,1,3‐benzothiadiazol‐4,7‐diyl)‐alt‐(3,3′′′‐di(2‐octyldodecyl)‐2,2′;5′,2′′;5′′,2′′′‐quaterthiophen‐5,5′′′‐diyl)] (PCE11):phenyl‐C61‐butyric acid‐methyl‐ester acceptor (PCBM) blend systems, it is demonstrated that by means of straight‐forward thermal analysis, vapor‐phase‐infiltration imaging, and transient‐absorption spectroscopy, various blend compositions and processing methodologies can be rapidly screened, information on promising combinations can be obtained, reliability issues with respect to reproducibility of thin‐film formation can be identified, and insights into how processing aids, such as nucleating agents, affect structure formation, can be gained.